PART |
Description |
Maker |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE NPN Epitaxial Base Transistor(TO220 Metal PackageNPN外延晶体管(TO220 金属封装,高可靠性)) DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited
|
2N2979DCSM |
TRANSISTOR | BJT | PAIR | NPN | 60V V(BR)CEO | 30MA I(C) | LLCC Dual Bipolar NPN Devices in a hermetically sealed
|
Seme LAB
|
ENA0412A |
Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor -1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
BUL44-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications Power 2A 400V NPN
|
ON Semiconductor
|
2SA1289 2SC3253 2SC3253S 2SC3253R 2SA1289R |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220AB TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-220AB SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 60V/5A High-Speed Switching Applications
|
ETC SANYO[Sanyo Semicon Device]
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
2N2484CSM 2N2484ACSM |
60V Vce, 0.05A Ic NPN bipolar transistor 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
Electronic Theatre Controls, Inc. SEME-LAB[Seme LAB] SemeLAB
|
2N4231A 2N4231A-JQR-AR1 |
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-213AA Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD Seme LAB
|
2N6536 2N6536.MOD |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-213AA Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD Seme LAB
|
BUX98AF BUX98AFR1 |
30 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD Seme LAB
|